Technology

The ULTRAWAVE project anticipates the request of ultra-capacity density for 5G and future generation networks, aiming at a layer with more than 100 Gbps/km2, combining for the first time a D-band PmP system fed by a G-band PtP system for high throughput backhaul. A full set of devices based on three technologies, vacuum electronics, solid state electronics and photonics, with performance beyond the state of the art, will be designed, fabricated and assembled to build a unique wireless system which will enable full exploitation of the upper millimetre-wave spectrum.

Fig. 1 ULTRAWAVE D-band PmP – G-Band PtP high capacity layer schematic

Fig. 1 ULTRAWAVE D-band PmP – G-Band PtP high capacity layer schematic

The main technological advancements and challenges of the project are:

Traveling wave tubes amplifiers (TWT) for linear high power

Only vacuum TWTs, among all the available technologies, have been demonstrated to provide wideband operation and high power capabilities. TWTs to be developed in ULTRAWAVE will operate at 140 GHz and 300 GHz with several Watts output power establishing the state-of-the-art. Such devices have only been demonstrated in laboratory environment yet. ULTRAWAVE and its predecessor H2020 TWEETHER focus on commercial TWT devices for the Transmission Hub in PmP communications systems. The TWT will be designed and fabricated at University of Lancaster in collaboration with Goethe University of Frankfurt.

Fig. 2 Double Corrugated Waveguide (DCW)

Fig. 2 Double Corrugated Waveguide (DCW)

Fig. 3 TWT schematic with DCW and electron beam

Fig. 3 TWT schematic with DCW and electron beam

G-band, D-band MMIC chipset

For D-Band, the new D004IH 40 nm process developed at OMMIC will be used for the LNA, the up converter and the down converter. The MMICs will be designed at University of Roma Tor Vergata with a PDK to be developed during the project. The power amplifier to drive the TWT and for the terminal will be designed and fabricated by Ferdinand Braun Institut using a 0.8μm and 0.5μm InP DHBT (double heterojunction bipolar transistor) with fT, fmax >350GHz.

G-band photonic transmitter

Photonic technology will be used to implement the G-band photonic transmitter for the Transmission Hub that will be designed and fabricated by Universidad Politécnica de Valencia. Fiber-optics is one of the key enabling technologies that allows the transmission of present Internet data. In Ultrawave project, fiber optic architectures will be investigated to make use of the wide bandwidth of optical components to provide high speed data signals in the upper limits of the millimetre-wave band.

System integration, Test bed and Field trial

The manufacture and assembly of the above parts beyond 100 GHz requires very high precision and control of the losses. Especially, at G-band the interconnect technology is requiring novel solution strategies for industrial applications and low cost. Ferdinand Braun Institut will contribute with its new flip-chip process, which will decrease the losses in the transition into a waveguide. HFSE will contribute with its state-of-the-art machining facilities.

The systems will be tested separately, preliminarily in laboratory environment and subsequently in the test field at Universidad Politécnica de Valencia. For the first time an outdoor test of 300 GHz THz will be performed with three integrated technologies: vacuum electronics, solid state electronics and photonics.