Technology

The ULTRAWAVE project anticipates the request of ultra-capacity density for 5G and future generation networks, aiming at a layer with more than 100 Gbps/km2, combining for the first time a D-band PmP system fed by a G-band PtP system for high throughput backhaul. A full set of devices based on three technologies, vacuum electronics, solid state electronics and photonics, with performance beyond the state of the art, will be designed, fabricated and assembled to build a unique wireless system which will enable full exploitation of the upper millimetre-wave spectrum.

Fig. 1 ULTRAWAVE D-band PmP – G-Band PtP high capacity layer schematic

Fig. 1 ULTRAWAVE D-band PmP – G-Band PtP high capacity layer schematic

The main technological advancements and challenges of the project are:

Traveling wave tubes amplifiers (TWT)

Traveling Wave Tubes are the only devices able to provide power at Watt level in a multi GHz band at millimetre waves. Two novel TWTs will be designed and realized at D-band (141 – 148.5 GHz) and G-band (275 – 305 GHz) respectively to enable the ULTRAWAVE ultra capacity layer. Technologies and process at the state of the art will be adopted. The TWTs will be designed and fabricated at Lancaster University, UK, in collaboration with Goethe University of Frankfurt, Germany and HF Systems Engineering GmbH, Germany.


Fig. 2 Traveling Wave Tube Concept

Fig. 2 Traveling Wave Tube Concept

D-band and G-band MMIC chipset

The D-Band (141 – 148.5 GHz) chipset will be build and designed by the new D004IH 40 nm process developed at OMMIC, France. The chipset includes the LNA, the up converter and the down converter. The MMICs will be designed at University of Roma Tor Vergata, Italy. The power amplifier to drive the TWT and for the terminal will be designed and fabricated by Ferdinand Braun Institute (FBH), Germany using 0.8μm InP DHBT (double heterojunction bipolar transistor).
The G-band chipset will include a power amplifier as driver for the TWT and a down converter both to be designed and fabricated by FBH with an advanced process with fmax ~ 500 GHz. A Low Noise Amplifier utilizing the OMMIC 40nm process will be designed by University of Rome Tor Vergata and realized at prototype level byOMMIC as first trial of an industrial process for G-band LNA.

G-band photonic transmitter

A G-band photonic transmitter for the Transmission Hub will be designed and fabricated by Universidad Politécnica de Valencia, Spain. It will be based on the heterodyne beat between two spectral lines in a unitravelling photodiodes (UTC-PD).

D-band PmP platform integration and field trial

The components of the D-band Point to Multipoint System will be packaged. The Transmission Hub will includes the radio, the TWT and the horn antennas. The Terminal will include the chipset and the horn antennas.
A field test will be carried out at Universidad Politécnica de Valencia, Spain

Proof of concept of the G-band PtP system

The G-band Point to Point system will be assembled on a system bench and tested. A G-band PtP link will be set at Universidad Politécnica de Valencia, Spain, for the first outdoor long range G-band PtP test.